last updated Thursday, September 16, 1999 6:55:05 PM.
© 1999 The Materials Research Society
C.T. Foxon, T.S. Cheng, D. Korakakis
University of Nottingham
S.V. Novikov
University of Nottingham and Ioffe Physical-Technical Institute
R.P. Campion
University of Nottingham
I. Grzegory, S. Porowski
Polish Academy of Sciences
M. Albrecht, H.P. Strunk
University of Erlangen-Nurnberg
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Various methods have been used to initiate growth by Molecular Beam Epitaxy (MBE) of GaN on sapphire, or other substrates, but there is always a problem with morphology and with a high defect density which results in the formation of a sub-grain boundary structure. We show that by using, homo-epitaxial growth on properly prepared bulk GaN substrates, combined with high temperature growth, we obtain a significant improvement in surface morphology. Growth at sufficiently high temperature leads to a rapid smoothing of the surface and to almost atomically flat surfaces over relatively large areas. Multi-Quantum Well structures grown on such GaN epitaxial films are dislocation free with abrupt interfaces.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G4.11 (1999).
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