This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

We have investigated the growth conditions of cubic GaN (-GaN) layers on very thin SiC-covered Si(001) by using gas-source molecular beam epitaxy as functions of SiC layer thickness, Ga-cell temperature and substrate temperature. Under the present SiC formation conditions on Si substrates by carbonization using C₂ H₂ gas, the SiC layers with the thickness between 2.5 and 4 nm result in the epitaxial growth of -GaN on thus SiC-formed Si substrates. At the highest GaN growth rate of 110 nm/h ( a Ga-cell temperature of 950°C), -GaN layers grown at a substrate temperature of 700°C show a nearly flat surface morphology and the fraction of included hexagonal GaN becomes negligible when compared to the results of -GaN layers grown under other conditions of Ga-cell and substrate temperatures. Thus obtained -GaN films have good performance in photoluminescence intensity although the FWHM of band-edge recombination peak is still wider (137 meV) than the reported values for the -GaN on 3C-SiC and GaAs.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.9 (1999).

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