This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

A new nitride semiconductor, single crystalline ZnGeN₂ has been successfully grown by MOCVD for the first time. The epitaxial ZnGeN₂ is found to be of hexagonal wurtzite lattice without ordering of the zinc and germanium atoms in the pseudomorphic Group III sublattice. Lattice constants of the ZnGeN₂ are a = 3.186 ± 0.007 Å, c = 5.174 ± 0.012 A, which gives c/a = 1.624.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.8 (1999).

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