last updated Saturday, April 3, 1999 2:39:58 AM.
© 1999 The Materials Research Society
L.J. Schowalter
Rensselaer Polytechnic Institute and Crystal IS, Inc.
Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi
Rensselaer Polytechnic Institute
G.A. Slack
Rensselaer Polytechnic Institute and Crystal IS, Inc.
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
High quality, epitaxial growth of AlN and AlxGa1-xN by OMVPE has been demonstrated on single-crystal AlN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [1010] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.76 (1999).
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