last updated Saturday, April 3, 1999 2:39:53 AM.
© 1999 The Materials Research Society
H. Hirayama
The Institute of Physicsl and Chemical Research (RIKEN)
Y. Aoyagi
The Institute of Physical and Chemical Research (RIKEN)
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
We demonstrate strong ultraviolet (UV) (280-330nm) photoluminescence (PL) emission from multi-quantum-well (MQW) structures consisting of AlGaN active layers fabricated by metal-organic chemical-vapor-deposition (MOCVD). Si-doping is shown to be very effective in order to enhance the PL emission of AlGaN QWs. We found that the optimum values of well thickness and Si-doping concentration of AlxGa1-xN/AlyGa1-yN (x=0.24-0.53, y=0.11) MQW structure for efficient emission were approximately 3nm and 2x1019 cm-3 , respectively. In addition, the PL intensities of AlGaN, GaN and InGaN quantum well structures are compared. We have found that the PL emission at 77K from a Al0.53Ga0.47N/Al0.11Ga0.89N MQW is as strong as that of InGaN QWs.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.74 (1999).
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