This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

Gallium nitride was grown on (111) Si by MOCVD by depositing an AlN buffer at 1080°C followed by GaN at 1060°C. The 2.2 µm layer cracked along {1-100} planes upon cooling to room temperature, but remained adherent. We were nonetheless able to examine the material between cracks with TEM. The character and arrangement of dislocations are much like those of GaN grown on Al₂O₃: ~2/3 pure edge and ~1/3 mixed (edge + screw), arranged in boundaries around domains of GaN that are slightly misoriented with respect to neighboring material. The 30 nm AlN buffer is continuous, indicating that AlN wets the Si, in contrast to GaN on Al₂O₃.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.72 (1999).

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