This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

Deep defect levels in n-type GaN/AlN/6H-SiC- and GaN/AlGaN/6H-SiC- heterostruc-tures grown by Metallorganic Vapor Phase Epitaxy were analyzed by Thermal and Optical Ad-mittance and Photocurrent Spectroscopy. The various thermal and optical transitions in the spec-tra originating from both the Schottky contact as well as the GaN/SiC- and AlGaN/GaN-heterojunctions were separated. This was achieved by variation of the modulation frequency, the use of different contact arrangements and by comparison with reference spectra from GaN/Sapphir samples and SiC substrates. In the GaN/AlGaN/SiC structures a bias voltage de-pendent peak shift was found which is correlated to an interface related defect distribution. In additionally to, SiC related defects, defect-band-transitions involving defects with transition en-ergies at 2.2eV, 1.85eV, E_G-(470±40) meV and E_G-(65-95) meV were found for the GaN layer.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.71 (1999).

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