S. Wilson, C.S. Dickens, J. Griffin, M.G. Spencer
Howard University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
A comparison study of the growth of aluminum nitride (AlN) single crystal epitaxy on 6H-SiC and 4H-SiC substrates has been performed. The material has been characterized using atomic force microscopy (AFM) and reflective high energy electron diffraction (RHEED). AlN crystals were deposited on the following 6H-SiC substrates: singular with and without an initial SiC epilayer, and 3.5 ° off-axis with and without an initial SiC epilayer. AlN crystals were deposited on 8.0° off-axis 4H-SiC with and without initial SiC epilayers. AFM shows that the deposition of AlN on 6H-SiC and 4H-SiC with an initial SiC epilayer displays high quality quasi-two dimensional growth as atomically flat or step flow epitaxy.
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[1] Lianghong Liu, B. Liu, Y. Shi, J.H. Edgar, MRS Internet J. Nitride Semicond. Res. 6, 7 (2001).
Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.61 (2000).
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