H. Shen, M. Wraback, J. Pamulapati
U.S. Army Research Laboratory
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are ( 0 2 1 1 ) ZnO//( 011 2 ) Al2O3 and [ 1 0 0 0 ] ZnO//[ 1 1 1 0 ] Al2O3 as confirmed by X-ray diffraction (
-2, and 
-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.60 (1999).
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