last updated Saturday, April 3, 1999 2:38:41 AM.
© 1999 The Materials Research Society
A. Kaschner
Technische Universitat Berlin
H. Siegle
Technische Universitat Berlin and Lawrence Berkeley National Laboratoray
A. Hoffmann, C. Thomsen
Technische Universitat Berlin
U. Birkle, S. Einfeldt, D. Hommel
University of Bremen
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm-1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.57 (1999).
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