This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

The Gan heteroepitaxy on 6H-SiC is affected by the bad morphology of the substrate surface. We performed a hydrogen etching at 1550°C on the 6H-SiC(0001) substrates to obtain atomically flat terraces. An improvement of the structural properties of GaN grown by MBE on such substrates after deposition of a LT-AlN buffer layer is observed. A value of less than 220 arcsec of the FWHM of the XRD rocking curve, showing a reduced screw dislocations density, is comparable with the best results reported until now for thick GaN samples. Photoluminescence showed a structured near band edge emission spectrum with evidence of the A, B and C free exciton recombinations.

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References Citing this Article

[1] C. D. Lee, R. M. Feenstra, O. Shigiltchoff, R. P. Devaty, W. J. Choyke, MRS Internet J. Nitride Semicond. Res. 7, 2 (2002).

Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.50 (2000).

last updated Thursday, April 25, 2002 9:52:51 AM.
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