last updated Saturday, April 3, 1999 2:38:17 AM.
© 1999 The Materials Research Society
M. Gherasimova, B. Gaffey, P. Mitev, L.J. Guido
Yale University
K.L. Chang
University of Illinosi
K.C. Hsieh
University of Illinois
S. Mitha
Charles Evans Associates
J. Spear
Philips Electronic Instruments
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Arsenic-doped GaN films and GaNAs films have been synthesized by MOCVD. Samples were grown on sapphire, GaN-coated sapphire, and GaAs substrates. Composition, structure, and phase distribution were characterized by EPMA, SIMS, XRD, and TEM. The arsenic content increases demonstrably as the growth temperature descreases from 1030 to 700 °C. In the high temperature limit, high quality arsenic-doped GaN forms on GaN-coated sapphire. In the low temperature regime, nitrogen-rich GaNAs forms under some growth conditions, with a maximum arsenic mole fraction of 3%, and phase segregation in the form of GaAs precipitates occurs with an increase in arsine pressure. Preferential formation of the nitrogen-rich phase on GaN-coated sapphire suggests the presence of substrate-induced "composition pulling".
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.44 (1999).
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