This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

Interdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the annealing treatments to prevent decomposition of the InGaN and GaN. In as-grown material, x-ray diffraction spectra show InGaN superlattice peaks up to the fourth order. After annealing at 1400°C for 15 min, only the zero-order InGaN peak is observed, a result of compositional disordering of the superlattice. Composition profiles from secondary ion mass spectrometry indicate significant diffusion of Mg from the p-type GaN layer into the quantum well region. This Mg diffusion may lead to an enhancement of superlattice disordering. For annealing temperatures between 1250 and 1300°C, a blue shift of the InGaN spontaneous emission peak is observed, consistent with interdiffusion of In and Ga in the quantum-well region.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.42 (1999).

last updated Saturday, April 3, 1999 2:38:12 AM.
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