MIJ-NSR Vol. 4S1, Art. G3.37, D.B. Thomson et al.

Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy

D.B. Thomson, T. Gehrke, K.J. Linthicum, P. Rajagopal, R.F. Davis
North Carolina State University

This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Pendeo-epitaxy is a type of selective growth of thin films from the sidewalls of etched forms. The resulting films are suspended from the sidewalls and do not interface with the substrate. This process route has advantages over conventional lateral epitaxial overgrowth (LEO) techniques. In this research, pendeo-epitaxial growth of GaN films has been achieved on elongated GaN seed columns. The seed columns were etched from GaN grown on 6H-SiC (0001) substrates via metalorganic vapor phase epitaxy (MOVPE). Silicon nitride mask layers atop the GaN seed columns forced growth from the sidewalls. Pendeo-epitaxial growth of GaN was investigated using several growth temperatures. Higher growth temperatures resulted in improved coalescence due to greater lateral to vertical growth ratios.

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References Citing this Article

[1] Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober, MRS Internet J. Nitride Semicond. Res. 6, 14 (2001).

Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.37 (2000).

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