M. Toth
University of Technology, Sydney
K. Fleischer
University of Technology, Sydney and Technical University of Berlin
M.R. Phillips
University of Technology, Sydney
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Electron beam induced electromigration of ON+ and H+ impurities in unintentionally n-doped GaN was investigated using cathodoluminescence (CL) kinetics profiling, CL imaging of regions pre-irradiated with a stationary electron beam, and wavelength dispersive x-ray spectrometry (WDS). The presented results (i) illustrate induced impurity diffusion in wide bandgap semiconductors, (ii) provide experimental evidence for the (VGa-ON)2- model of yellow luminescence in GaN with low Si content , (iii) confirm the roles of O in frequently reported bound exciton and donor-acceptor pair emissions and (iv) suggest the involvement of ON+ and hydrogenated gallium vacancies in a blue emission in autodoped GaN.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.30 (2000).
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