last updated Saturday, April 3, 1999 2:37:33 AM.
© 1999 The Materials Research Society
H.S. Kim, J.Y. Lin, H.X. Jiang
Kansas State University
W.W. Chow
Sandia National Laboratories
A. Botchkarev, H. Morkoc
Virginia Commonwealth University
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.3 (1999).
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