G. Steude, T. Christmann, B.K. Meyer
Universitat Giessen
A. Goeldner, A. Hoffmann
Institut fur Festkoerperphysik der TU Berlin
F. Bertram, J. Christen
Otto von Guericke Universitat Magdeburg
H. Amano, I. Akasaki
Dept. EEE, no institution given
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We have investigated AlxGa1-xN /GaN heterostructures (0<x<0.22) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence (PL), reflexion and cathodo-luminescence experiments. The energetic positions of the free A-exciton in GaN and AlGaN as a function of the alloy compositions are deduced from temperature dependent PL and from reflexion measurements. We obtain a small bowing parameter and no evidence for a Stokes shift between absorption and emission. The AlxGa1-xN films induce additional compressive strain on the underlying GaN film. Compositional inhomogeneities are present, but the fluctuations are too small to be important for carrier localisation. The broadening of the luminescence line width in the alloy can be described by statistical disorder of a random alloy.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.26 (2000).
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