This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

P-type doping with Mg and n-type doping with Si of cubic GaN (c-GaN) epilayers is reported. Cubic GaN films are grown by rf-plasma assisted MBE on semi-insulating GaAs (001) substrates at a substrate temperature of 720°C. Elemental Mg and Si are evaporated from thermal effusions cells. Secondary ion mass spectroscopy (SIMS), low temperature photoluminescence (PL) and temperature dependent Hall-effect measurements are used to study the incorporation, optical and electrical properties. A Mg related shallow donor-acceptor transiton at 3.04 eV with an acceptor activation energy of E_\1 = 0.230 eV is observed by low temperature PL. At Mg concentrations above 10¹⁸ cm^-3 the dominance of a broad blue band indicates that also in c-GaN Mg is incorporated at different lattice sites or forms complexes. Si-doped c-GaN epilayers are n-type with electron concentrations up to 5*10¹⁹ cm^-3 . The incorporation of Si follows exactly the vapor pressure curve of Si, indicating a sticking coefficient of 1 for Si in c-GaN. With increasing Si-concentration the intensity of the near-band luminescence continuously increases and broadens.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.24 (1999).

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