last updated Saturday, April 3, 1999 2:37:04 AM.
© 1999 The Materials Research Society
Lawrence Robins, A.J. Paul
National Institute of Standards and Technology,
C.A. Parker, J. C. Roberts, S. M. Bedair
Dept. of Electrical and Computer Engineering, North Carolina State University,
E. L. Piner , N. A. El-Masry
Department of Materials Science and Engineering, North Carolina State University,
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
InxGa1-xN films with x=0.06 to x=0.49 were characterized by optical transmittance, Raman, and photoluminescence excitation spectroscopies. Previous microstructural characterizations detected phase separation only in films with x>0.2. The transmittance data suggest that compositional inhomogeneity is also present in the lower-x films (x<0.2). Both Raman and photoluminescence excitation spectra show features that correlate with compositional inhomogeneity and phase separation in the films with x>0.2. The composition dependence of the Raman spectra, from x=0.28 to x=0.49, is consistent with an increase in the size of the phase-separated regions with increasing x.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.22 (1999).
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