MIJ-NSR Vol. 4S1, Art. G3.2, T. Gehrke et al.

Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

T. Gehrke, K.J. Linthicum, D.B. Thomson, P. Rajagopal, A.D. Batchelor, R.F. Davis
North Carolina State University

This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Pendeo-epitaxy of individual GaN and Al_xGa_1-xN films and single- and multi-layer heterostructures of these materials have been achieved on a columnar GaN seed layer using metallorganic vapor phase epitaxy. These structures have been characterized using scanning electron microscopy and atomic force microscopy. The RMS roughness value of the grown side wall plane (1120 ) of these structures was 0.099 nm.

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References Citing this Article

[1] M. Callahan, M. Harris, M. Suscavage, D. Bliss, J. Bailey, MRS Internet J. Nitride Semicond. Res. 4, 10 (1999).

[2] Robert F. Davis, T. Gehrke, K.J. Linthicum, P. Rajagopal, A.M. Roskowski, T. Zheleva, Edward A. Preble, C.A. Zorman, M. Mehregany, U. Schwarz, J. Schuck, R. Grober, MRS Internet J. Nitride Semicond. Res. 6, 14 (2001).

Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.2 (2000).

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