last updated Saturday, April 3, 1999 2:36:50 AM.
© 1999 The Materials Research Society
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Thermal residual stresses can detrimentally affect the electronic and optical properties of epitaxial films thereby shortening device lifetime. Based on our earlier work on thermal expansion of nitrides, we provide a finite element modeling analysis of the residual stress distribution of multilayered GaN and AlN on 6H-SiC. The effects of thickness and growth temperatures are considered in the analysis.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.18 (1999).
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