last updated Saturday, April 3, 1999 2:36:45 AM.
© 1999 The Materials Research Society
C. Ronning
University of Gottingen
K.J. Linthicum, E.P. Carlson, P.J. Hartlieb, D.B. Thomson, T. Gehrke, R.F. Davis
North Carolina State University
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Single crystalline (0001) gallium nitride layers were implanted with beryllium and subsequently annealed within the range of 300-1100°C for 10-60 minutes under a flux of atomic nitrogen obtained using a rf plasma source. The nitrogen flux protected the GaN surface from decomposition in vacuum at high temperatures. SIMS measurements revealed that no long range diffusion of the implanted Be occurred at 900 or 1100°C. XRD spectra showed defect-related peaks in the as-implanted samples; these peaks disappeared upon annealing at 900°C and higher for 10 minutes. Photoluminescence (PL) measurements showed one new line at 3.35 eV which provided strong evidence for the presence of optically active Be acceptors.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.17 (1999).
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