M. Losurdo, P. Capezzuto, G. Bruno
Plasma Chemistry Research Center-CNR
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Cubic and hexagonal GaN layers have been grown on GaAs (001) and 
-Al2 O3 (0001) substrates, respectively, by remote plasma metalorganic chemical vapor deposition (RP-MOCVD). In situ spectroscopic ellipsometry is used to monitor in real time the chemistry and kinetics of the GaN growth. The subtrate/GaN interface formation is highlighted and the effect of the substrate plasma nitridation on the initial growth stage is discussed.
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.12 (1999).
|
|
|
Reference List Building For information on building reference lists, see About the MIJ-NSR Reference List Builder |
