last updated Saturday, April 3, 1999 2:36:01 AM.
© 1999 The Materials Research Society
Takeshi Uenoyama
Matsushita Electric Industrial Co., Ltd.
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G2.9 (1999).
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