This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

We report on the composition dependence of the band gap energy of strained hexagonal In_xGa_1-xN layers on GaN with x15, grown by metal-organic chemical vapor deposition on sapphire substrates. The composition of the (InGa)N was determined by secondary ion mass spectroscopy. High-resolution X-ray diffraction measurements confirmed that the (InGa)N layers with typical thicknesses of 30 nm are pseudomorphically strained to the in-plane lattice parame-ter of the underlying GaN. Room-temperature photoreflection spectroscopy and spectroscopic ellipsometry were used to determine the (InGa)N band gap energy. The composition dependence of the band gap energy of the strained (InGa)N layers was found to be given by E_G(x)=3.43 - 3.28·x (eV) for x 15. When correcting for the strain induced shift of the fundamental energy gap, a bowing parameter of 3.2 eV was obtained for the composition dependence of the gap en-ergy of unstrained (InGa)N.

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References Citing this Article

[1] S. Stepanov, W.N.Wang, B.S.Yavich, V. Bougrov, Y.T.Rebane, Y.G.Shreter, MRS Internet J. Nitride Semicond. Res. 6, 6 (2001).

Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G2.8 (2000).

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