This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

We present a study of the radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well samples, where the conditions of growth of the InGaN quantum layers were varied. The piezoelectric field as well as short range potential fluctuations are screened via different mechanisms by donor electrons and excited electron-hole pairs. These effects account for a large part of the spectral shift with donor doping (an upward shift of the photoluminescence (PL) peak up to 0.2 eV is observed for a Si donor density of 2 x 10¹⁸ cm^-3 in the well), with excitation intensity and with delay time after pulsed excitation (also shifts up to 0.2 eV). It appears like 2-dimensional screening of short range potential fluctuations is needed to fully explain the data. We suggest that excitons as well as shallow donors are at least partly impact ionized by electrons in the rather strong lateral potential fluctuations.

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References Citing this Article

[1] B. Monemar, J. P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki, MRS Internet J. Nitride Semicond. Res. 4, 16 (1999).

Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G2.5 (1999).

last updated Tuesday, December 14, 1999 6:39:16 PM.
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