This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

Temperature-dependent photoluminescence (PL) studies have been performed on InGaN epilayers and InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. We observed anomalous temperature dependent emission behavior (specifically an S-shaped decrease-increase-decrease) of the peak energy (E_PL) of the InGaN-related PL emission with increasing temperature. In the case of the InGaN epilayer, E_PL decreases in the temperature range of 10 -- 50 K, increases for 50 -- 110 K, and decreases again for 110 -- 300 K with increasing temperature. For the InGaN/GaN MQWs, E_PL decreases from 10 -- 70 K, increases from 70 -- 150 K, then decreases again for 150 -- 300 K. The actual temperature dependence of the PL emission was estimated with respect to the bandgap energy determined by photoreflectance spectra. We observed that the PL peak emission shift has an excellent correlation with a change in carrier lifetime with temperature. We demonstrate that the temperature-induced S-shaped PL shift is caused by the change in carrier recombination dynamics with increasing temperature due to inhomogeneities in the InGaN structures.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G2.4 (1999).

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