This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

We are currently engaged in a systematic study of the optical properties of Er doped III-nitrides prepared by metalorganic molecular beam epitaxy (MOMBE). Under below-gap excitation it was observed that GaN: Er samples with [O]~10²⁰ cm^-3 and [C]~10²¹ cm^-3 luminesce at 1540 nm with an intensity of more than two orders of magnitude greater than samples with low oxygen and carbon concentrations (< 10¹⁹ cm^-3 ). Associated with the different oxygen and carbon concentrations were different thermal quenching behaviors and below-gap absorption bands. Interestingly, for above-gap excitation only small differences in absolute Er ³⁺ PL intensity and quenching behavior were observed for samples of varying O and C content. Initial lifetime studies were performed and showed a rather unusual short decay time of ~100 µs at room temperature. In order to gain more insight in the Er ³⁺ PL, a comparison of the integrated PL intensity and lifetime was performed for the temperature range 15-500K. The result reveals that the Er ³⁺ PL quenches above room temperature due to the onset of non-radiative decay and the reduction in excitation efficiency. All samples were also investigated for visible luminescence. Red luminescence was observed from GaN: Er on sapphire substrates under below-gap excitation.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G11.6 (1999).

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