last updated Saturday, April 3, 1999 2:35:12 AM.
© 1999 The Materials Research Society
S. Kim, X. Li, J.J. Coleman
University of Illinois at Urbana-Champaign
R. Zhang, D.M. Hansen, T.F. Kuech
University of Wisconsin
S.G. Bishop
University of Illinois at Urbana-Champaign
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the 1540 nm 4I13/2 => 4I15/2 emission of Er3+ in in situ Er-doped and Er-implanted GaN grown by hydride vapor phase epitaxy (HVPE). The PL and PLE of these two different Er-doped HVPE-grown GaN films are compared with Er-implanted GaN grown by metal organic chemical vapor deposition (MOCVD). In the in situ Er-doped HVPE-grown GaN, the lineshape of the broad PLE absorption bands and the broad PL bands is similar to that in Er-doped glass. The PL spectra of this in situ Er-doped sample are independent of excitation wavelength, unlike the PL of the Er-implanted GaN. These PL spectra are quite different from the site-selective PL spectra observed in the Er-implanted GaN, indicating that the seven different Er 3+ sites existing in the Er-implanted MOCVD-grown GaN are not observed in the in situ Er-doped HVPE-grown GaN. Four of the seven different Er 3+ sites observed in the Er-implanted MOCVD-grown GaN annealed at 900°C under a flow of N2 are present in the Er-implanted HVPE-grown GaN annealed at 800°C in an NH3/H2 atmosphere.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G11.4 (1999).
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