This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

Erbium was implanted with 160 keV at doses between 5x10¹⁴ and 5x10¹⁵ at/cm² into (0001) epitaxial GaN on sapphire and annealed at various temperatures between 600° and 1000° C. The RBS/Channeling technique was used to analyze the damage recovery during different annealing steps and to determine the lattice location of the implanted Er. For a sample implanted with 5x10¹⁴ and annealed for 30 min at 600° C a complete overlap of the Er and Ga angular scans across the <0001> axis was observed, indicating that 100% of Er occupies substitutional sites. Measurements along the <10 1 1> channel show that Er is located on Ga sites. The damage recovery was slightly better for the samples co-implanted with the same dose of Oxygen in an overlapping profile (E=25 keV). However, a complete recovery of the damage caused by the implantation was not achieved. Samples implanted with higher Er and O doses (5x10¹⁵ at/cm² ) and at the same energies as above were annealed at 600° for 30 min and at 900°, 1000° C for 120 s using a proximity cap. The higher dose caused an almost complete amorphisation of the surface layer. After annealing indications of epitaxial regrowth were observed, however, the substitutional fraction remains substantially lower and the damage recovery is less complete.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G11.2 (1999).

last updated Saturday, April 3, 1999 2:35:02 AM.
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