MIJ-NSR Vol. 4S1, Art. G10.6, J.T. Hsieh et al.

Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN

J.T. Hsieh, J.M. Hwang, H.L. Hwang
National Tsing-Hua University

W.H. Hung
Synchrotron Radiation Research Center

This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.

Abstract

Damage-free etching of GaN by Cl₂, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

Full text of this article is available.

Portable Document Format (Adobe Acrobat) Version (157K)

For information about using Adobe Acrobat files, click here .

Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G10.6 (1999).

Reference List Building

For information on building reference lists, see About the MIJ-NSR Reference List Builder