This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

We review pyroelectric and piezoelectric properties of GaN-based materials. Pyroelectric effects in GaN have been studied in two different regimes: (i) uniform sample heating regime and (ii) under applied temperature gradient along the sample. The modeling results show that the pyroelectric coefficient, P_v, in GaN (for c-axis along the contacts) can reach 7x10⁵ V/m-K (compared to P_v = 5x10⁵ V/m-K for the best-known high temperature pyroelectric/piezoelectric material LiTaO₃). This points to a high potential of GaN-based sensors for high temperature pyroelectronics. Piezoelectric effects strongly affect the performance of electronic and light-emitting devices based on III-N materials. Piezoelectrically induced charge in heterostructures can be as large as 3 to 4x10¹³ cm^-2 . Hence, strong lattice polarization effects provide unique possibilities for utilizing GaN-based materials in high temperature piezoelectronics and for their applications in pyroelectric detectors.

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References Citing this Article

[1] Jae-Hoon Lee, Myoung-Bok Lee, Sung-Ho Hahm, Yong-Hyun Lee, Jung-Hee Lee, Young- Ho Bae, Hyun Kyung Cho, MRS Internet J. Nitride Semicond. Res. 8, 5 (2003).

Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G1.6 (2000).

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