last updated Saturday, April 3, 1999 2:34:18 AM.
© 1999 The Materials Research Society
D. Qiao, L.S. Yu, S.S.Lau
Department of Electrical and Computer Engineering, University of California, San Diego
G. J. Sullivan
Rockwell Science Center
S. Ruvimov, Z. Liliental-Weber
Lawrence Berkeley National Laboratory
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
In this paper, we discuss the issue of fabricating reliable and reproducible ohmic contacts on AlGaN HFET structures. During the course of our investigation of fabricating contacts to HFETs, we found that the contact properties could vary significantly from one sample to another, even though they were nominally the same. This problem was prominently manifested in the ohmic contact behavior. The origin of this problem was traced back to the variation of the HFET structure during growth. In this paper, we report an attempt to fabricate reproducible ohmic contacts of these structures. I.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G1.5 (1999).
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