last updated Monday, April 26, 1999 11:07:11 AM.
© 1999 The Materials Research Society
H. Morkoc
Virginia Commonwealth University
R. Cingolani
Virginia Commonwealth University and University of Lecce
W. Lambrecht
Case Western Reserve University
B. Gil
Montpellier University II
H-X. Jiang, J. Lin
Kansas State University
D. Pavlidis
University of Michigan
K. Shenai
University of Illinois
This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Wide bandgap nitride semiconductors have recently attracted a great level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters and detectors. However, this material system with its favorable heterojunctions and transport properties began to produce very respectable power levels in microwave amplifiers. If and when the breakdown fields achieved experimentally approaches the predicted values, this material system may also be very attractive for switching power devices. In addition to the premature breakdown, a number of scientific challenges remain including a clear experimental investigation of polarization effects. In this paper, transport properties as pertained to electronic devices and potential switching devices, and polarization effects will be treated.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G1.2 (1999).
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