Volume 4S1
| C. R. Abernathy, Co-Editor in Chief | B. Monemar, Co-Editor in Chief |
Volume Guest Editors |
|||
| S. J. Pearton | C. P. Kuo | A. F. Wright | T. Uenoyama |
Published 1999. A keyword index and an author index are also available.
| C. R. Abernathy, Co-Editor in Chief | B. Monemar, Co-Editor in Chief |
Volume Guest Editors |
|||
| S. J. Pearton | C. P. Kuo | A. F. Wright | T. Uenoyama |
Published 1999. A keyword index and an author index are also available.
G1.1. InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, T. Mukai.
G1.2. Material Properties of GaN in the Context of Electronic Devices
H. Morkoc, R. Cingolani, W. Lambrecht, B. Gil, H-X. Jiang, J. Lin, D. Pavlidis, K. Shenai.
G1.3. Near Defect Free GaN Substrates
S. Porowski.
G1.4. Dry and Wet Etching for Group III-Nitrides
I. Adesida, C. Youtsey, A. T. Ping, F. Khan, L. T. Romano, G. Bulman.
G1.5. Contact Issues for GaN Technology
D. Qiao, L.S. Yu, S.S.Lau, G. J. Sullivan, S. Ruvimov, Z. Liliental-Weber.
G1.6. Pyroelectric and Piezoelectric Properties of GaN-Based Materials
M.S. Shur, A.D. Bykhovski, R. Gaska.
G2.2. Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
Daniel Hofstetter, Robert L. Thornton, Linda T. Romano, David P. Bour, Michael Kneissl, Rose M. Donaldson, Clarence Dunnrowicz.
G2.3. Mechanisms of Optical Gain in Cubic GaN and InGaN
J. Holst, A. Hoffmann, I. Broser, T. Frey, B. Schottker, D.J. As, D. Schikora, K. Lischka.
G2.4. Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
Yong-Hoon Cho, B.D. Little, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars.
G2.5. Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
B. Monemar, J.P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki.
G2.7. Spectroscopic Studies in InGaN Quantum Wells
S.F. Chichibu, T. Sota, K. Wada, S.P. DenBaars, S. Nakamura.
G2.8. Composition Dependence of the Band Gap Energy of InxGa1-xN Layers on GaN (x
0.15) Grown by Metal-Organic Chemical Vapor Deposition
J. Wagner, A. Ramakrishnan, D. Behr, M. Maier, N. Herres, M. Kunzer, H. Ogloh, K-H. Bachem.
G2.9. Optical Gain Spectra in GaN/InGaN Quantum Wells with the Compositional Fluctuations
Takeshi Uenoyama.
G3.1. Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE
Kazuyuki Tadatomo, Yoichiro Ohuchi, Hiroaki Okagawa, Hirotaka Itoh, Hideto Miyake, Kazumasa Hiramatsu.
G3.2. Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
T. Gehrke, K.J. Linthicum, D.B. Thomson, P. Rajagopal, A.D. Batchelor, R.F. Davis.
G3.3. Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
H.S. Kim, J.Y. Lin, H.X. Jiang, W.W. Chow, A. Botchkarev, H. Morkoc.
G3.4. Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
Igor Aksenov, Yoshinobu Nakada, Hajime Okumura.
G3.7. Temperature Effect on the Quality of AlN Thin Films
Margarita P. Thompson, Andrew R. Drews, Changhe Huang, Gregory W. Auner.
G3.8. Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN2
L.D. Zhu, P.H. Maruska, P.E. Norris, P.W. Yip, L.O. Bouthillette.
G3.9. Cubic GaN Heteroepitaxy on Thin-SiC Covered Si(001)
Yuichi Hiroyama, Masao Tamura.
G3.10. Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
A.J. Ptak, K.S. Ziemer, M.R. Millecchia, C.D. Stinespring, T.H. Myers.
G3.11. Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
Tae-Yeon Seong, In-Tae Bae, Y. Zhao, C.W. Tu.
G3.12. GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry
M. Losurdo, P. Capezzuto, G. Bruno.
G3.13. Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
Zhigang Mao, Stuart McKernan, C. Barry Carter, Wei Yang, Scott A. McPherson.
G3.14. Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
M. Lisker, A. Krtschil, H. Witte, J. Christen, D.J. As, B. Schottker, K. Lischka.
G3.15. Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
W. Shan, J.W. Ager III, W. Walukiewicz, E.E. Haller, M.D. McCluskey, N.M. Johnson, D.P. Bour.
G3.16. Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
T. Paskova, E.B. Svedberg, L.D. Madsen, R. Yakimova, I.G. Ivanov, A. Henry, B. Monemar.
G3.17. Characterization of Be-Implanted GaN Annealed At High Temperatures
C. Ronning, K.J. Linthicum, E.P. Carlson, P.J. Hartlieb, D.B. Thomson, T. Gehrke, R.F. Davis.
G3.18. Thermal Residual Stress Modeling in AlN and GaN Multilayer Samples
Kai Wang, Robert R. Reeber.
G3.19. Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
R. Langer, J. Simon, O. Konovalov, N.T. Pelekanos, R. Andre, A. Barski, M. Godlewski.
G3.22. Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
Lawrence Robins, A.J. Paul, C.A. Parker, J. C. Roberts, S. M. Bedair, E. L. Piner , N. A. El-Masry.
G3.23. Growth of Oriented Thick Films of Gallium Nitride From the Melt
Jeffrey S. Dyck, Kathleen Kash, Michael T. Grossner, Cliff C. Hayman, Alberto Argoitia, Nan Yang, Moon-Hi Hong, Martin E. Kordesch.
G3.24. p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
D.J. As, T. Simonsmeier, J. Busch, B. Schottker, M. Lubbers, J. Mimkes, D. Schikora, K. Lischka, W. Kriegseis, W. Burkhardt, B.K. Meyer.
G3.25. Cubic InGaN Grown by MOCVD
J.B. Li, Hui Yang, L.X. Zheng, D.P. Xu, Y.T. Wang.
G3.26. Optical Investigations of AlGaN on GaN Epitaxial Films
G. Steude, T. Christmann, B.K. Meyer, A. Goeldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, I. Akasaki.
G3.29. Extended Defects in GaN: A Theoretical Study
J. Elsner, Th. Frauenheim, M. Haugk, R. Gutierrez, R. Jones, M.I. Heggie.
G3.30. Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN
M. Toth, K. Fleischer, M.R. Phillips.
G3.33. Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
S. Einfeldt, T. Bottcher, D. Hommel, H. Selke, P.L. Ryder, F. Gertram, T. Riemann, T. Riemann, D. Rudloff, J. Christen.
G3.37. Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
D.B. Thomson, T. Gehrke, K.J. Linthicum, P. Rajagopal, R.F. Davis.
G3.38. Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
Tsvetanka S. Zheleva, Scott A. Smith, Darren B. Thomson, Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Eric Carlson, Waeil M. Ashmawi, Robert F. Davis.
G3.39. Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
Z.Y. Xie, C.H. Wei, L.Y. Li, J.H. Edgar, J. Chaudhuri, C. Ignatiev.
G3.40. High Quality Hydrothermal ZnO Crystals
M. Suscavage, M. Harris, D. Bliss, P. Yip, S-Q. Wang, D. Schwall, L. Bouthillette, J. Bailey, M. Callahan, D.C. Look, D.C. Reynolds, R.L. Jones, C.W. Litton.
G3.42. Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
M.D. McCluskey, L.T. Romano, B.S. Krusor, D. Hofstetter, D.P. Bour, M. Kneissl, N.M. Johnson, T. Suski, J. Jun.
G3.44. Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
M. Gherasimova, B. Gaffey, P. Mitev, L.J. Guido, K.L. Chang, K.C. Hsieh, S. Mitha, J. Spear.
G3.49. Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Jong-Hee Kim, Gye Mo Yang, Sung Chul Choi, Ji Youn Choi, Hyun Kyung Cho, Kee Young Lim, Hyung Jae Lee.
G3.50. Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
R. Lantier, A. Rizzi, D. Guggi, H. Luth, B. Neubauer, D. Gerthsen, S. Frabboni, G. Coli, R. Cingolani.
G3.53. Effects of Susceptor Geometry on GaN Growth on Si(111) with a New MOCVD Reactor
Yungeng Gao, Daniel A. Gulino, Ryan Higgins.
G3.56. Structure of MOVPE Deposited AlN on Si(111)
Eric Rehder, M. Zhou, L. Zhang, N.R. Perkins, S.E. Babcock, T.F. Kuech.
G3.57. Influence of Doping on the Lattice Dynamics GaN
A. Kaschner, H. Siegle, A. Hoffmann, C. Thomsen, U. Birkle, S. Einfeldt, D. Hommel.
G3.59. Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Philippe Vennegues, Stephane Dalmasso, Pierre Ruterana, Lionel Hirsch, Serge Barriere.
G3.60. Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
H. Shen, M. Wraback, J. Pamulapati, S. Liang, C. Gorla, Y. Lu.
G3.61. Comparative Growth of AlN on Singular and Off-Axis 6H and 4h-SiC by MOCVD
S. Wilson, C.S. Dickens, J. Griffin, M.G. Spencer.
G3.62. Gallium Nitride Growth Using Diethylgallium Chloride As An Alternative Gallium Source
Ling Zhang, Rong Zhang, Marek P. Boleslawski, T.F. Kuech.
G3.66. Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
C. Wetzel, T. Takeuchi, H. Amano, I. Akasaki.
G3.67. Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride
E.E. Reuter, R. Zhang, T.F. Kuech, S.G. Bishop.
G3.68. GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
Michael E. Bartram, J. Randall Creighton.
G3.69. Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
Pierre Lefebvre, Bernard Gil, Jacques Allegre, Henry Mathieu, Nicolas Grandjean, Mathieu Leroux, Jean Massies.
G3.70. Enhanced GaN Decomposition At MOVPE Pressures
D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman.
G3.71. Defect States in SiC/GaN -and SiC/GaN /AlGaN- Heterostructures Characterized by Admittance and Photocurrent Spectroscopy
H. Witte, A. Krtschil, M. Lisker, J. Christen, F. Scholz, J. Off.
G3.72. Microstructure of GaN Grown on (111) Si by MOCVD
D.M. Follstaedt, J. Han, P. Provencio, J.G. Fleming.
G3.73. Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium
W.R. Wampler, S.M. Myers.
G3.74. Optical Properties of Si-Doped AlxGa1-xN/AlyGa1-yN (x=0.24-0.53, y=0.11) Multi-Quantum-Well Structures
H. Hirayama, Y. Aoyagi.
G3.76. Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
L.J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, G.A. Slack.
G3.77. Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
E.C. Piquette, P.M. Bridger, R.A. Beach, T.C. McGill.
G3.78. Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures
N.V. Edwards, A.D. Batchelor, I.A. Buyanova, L.D. Madsen, M.D. Bremser, R.F. Davis, D.E. Aspnes, B. Monemar.
G3.79. Growth and Characterization of BxGa1-xN on 6H-SiC (0001) by MOVPE
C.H. Wei, Z.Y. Xie, J.H. Edgar, K.C. Zeng, J.Y. Lin, H.X. Jiang, C. Ignatiev, J. Chaudhuri, D.N. Braski.
G3.80. Optical and Structural Properties of Er3+-Doped GaN Grown by MBE
R.H. Birkhahn, R. Hudgins, D.S. Lee, B.K. Lee, A.J. Steckl, A. Saleh, R.G. Wilson, J.M. Zavada.
G4.1. Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
Yasutoshi Kawaguchi, Shingo Nambu, Hiroki Sone, Masahito Yamaguchi, Hideto Miyake, Kazumasa Hiramatsu, Nobuhiko Sawaki, Yasushi Iyechika, Takayoshi Maeda.
G4.3. Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
Zhonghai Yu, M.A.L. Johnson, J.D. Brown, N.A. El-Masry, J.F. Muth, J.W. Cook, Jr., J.F. Schetzina, K.W. Haberern, H.S. Kong, J.A. Edmond.
G4.5. Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra.
G4.6. TEM Study of Defects in Laterally Overgrown GaN Layers
Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, J. Park, P.A. Grudowski, C.J. Eiting, R.D. Dupuis.
G4.7. Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
R. Zhang, L. Zhang, D.M. Hansen, Marek P. Boleslawski, K.L. Chen, D.Q. Lu, B. Shen, Y.D. Zheng, T.F. Kuech.
G4.8. GaN: From Selective Area Epitaxy To Epitaxial Lateral Overgrowth
X. Li, S.G. Bishop, J.J. Coleman.
G4.9. Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
K.J. Linthicum, T. Gehrke, D.B. Thomson, K.M. Tracy, E.P. Carlson, T.P. Smith, T.S. Zheleva, C.A. Zorman, M. Mehregany, R.F. Davis.
G4.11. Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
C.T. Foxon, T.S. Cheng, D. Korakakis, S.V. Novikov, R.P. Campion, I. Grzegory, S. Porowski, M. Albrecht, H.P. Strunk.
G5.1. Computational Materials Science, An Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences
A. Sher, M. van Schilfgaarde, M.A. Berding, S. Krishnamurthy, A-B. Chen.
G5.2. Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
J.F. Muth, J.D. Brown, M.A.L. Johnson, Zhonghai Yu, R.M. Kolbas, J.W. Cook, Jr., J.F. Schetzina.
G5.3. Novel Defect Complexes and Their Role in p-Type Doping of GaN
Fernando A. Reboredo, Sokrates T. Pantelides.
G5.4. Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
W.M. Chen, I.A. Buyanova, Mt. Wagner, B. Monemar, J.L. Lindstrom, H. Amano, I. Akasaki, I. Akasaki.
G5.5. Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
O.P. Seifert, O. Kirfel, M. Munzel, M.T. Hirsch, J. Parisi, M. Kelly, O. Ambacher.
G5.6. Studies on Carbon As Alternative p-Type Dopant for GaN
U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel, S. Strauf, P. Michler, J. Gutowski.
G5.8. The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
S.M. Myers, T.J. Headley, C.R. Hills, J. Han, G.A. Petersen, C.H. Seager, W.R. Wampler.
G5.9. Spectroscopy of Proton Implanted GaN
M.G. Weinstein, M. Stavola, C.Y. Song, C. Bozdog, H. Przbylinski, G.D. Watkins, S.J. Pearton, R.G. Wilson.
G5.10. A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
M.A.L. Johnson, Zhonghai Yu, J.D. Brown, F.A. Koeck, N.A. El-Masry, H.S. Kong, J.A. Edmond, J.W. Cook, Jr., J.F. Schetzina.
G6.2. Characteristic Temperature Estimation for GaN-Based Lasers
T. Honda, H. Kawanishi, T. Sakaguchi, F. Koyama, K. Iga.
G6.3. GaN Nanotubes
Seung Mi Lee, Young Hee Lee, Yong Gyoo Hwang, J. Elsner, Dirk Porezag, Thomas Frauenheim.
G6.4. Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
W.Y. Ho, W.K. Fong, Charles Surya, K.Y. Tong, L.W. Lu, W.K. Ge.
G6.5. Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
W.Y. Ho, W.K. Fong, C. Surya, K.Y. Tong, W. Kim, A. Botcharev, H. Morkoc.
G6.6. Monte Carlo Simulation of Hall Effect in n-Type GaN
J.D. Albrecht, P.P. Ruden, E. Bellotti, K.F. Brennan.
G6.7. Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
Shean-Yih Chiu, A.F.M. Anwar, Shangli Wu.
G6.8. Theoretical Study of ZnO and Related MgxZn1-xO Alloy Band Structures
Walter R.L. Lambrecht, Sukit Limpijumnong, B. Segall.
G6.9. Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
Michael E. Coltrin, Christine C. Willan, Michael E. Bartram, Jung Han, Nancy Missert, Mary H. Crawford, Albert G. Baca.
G6.11. Electronic Structure and Optical Properties of ZnGeN2
Sukit Limpijumnong, Sergey N. Rashkeev, Walter R.L. Lambrecht.
G6.12. Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
S.A. Goodman, F.D. Auret, F.K. Koschnick, J-M. Spaeth, B. Beaumont, P. Gibart.
G6.13. DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
F.D. Auret, S.A. Goodman, F.K. Koschnick, J-M. Spaeth, B. Beaumont, P. Gibart.
G6.14. Photoluminescence of FS-GaN Treated in Alcoholic Sulfide Solutions
Y.V. Zhilyaev, M.E. Kompan, E.V. Konenkova, S.D. Raevskii.
G6.15. Effects of Oxygen Ion Implantation in Gallium Nitride
W. Jiang, W.J. Weber, S. Thevuthasan, G.J. Exarhos, B.J. Bozlee.
G6.20. Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
Jin Seo Im, H. Kollmer, O. Gfrorer, J. Off, F. Scholz, A. Hangleiter.
G6.23. Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire
M. Sumiya, T. Ohnishi, M. Tanaka, A. Ohtomo, M. Kawasaki, M. Yoshimoto, K. Koinuma, K. Ohtsuka, S. Fuke.
G6.25. Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
Michael C.Y. Chan, Kwok-On Tsang, E. Herbert Li, Steven P. DenBaars.
G6.26. XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces
R.A. Beach, E.C. Piquette, T.C. McGill.
G6.28. Thermal Stability of GaN Investigated by Raman Scattering
M. Kuball, F. Demangeot, J. Frandon, M.A. Renucci, N. Grandjean, O. Briot.
G6.29. Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Multiple Quantum Wells
A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. N. Kovalev, F. I. Manyakhin.
G6.31. Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing Temperature
Shizuo Fujita, Mitsuru Funato, Doo-Cheol Park, Yoshifumi Ikenaga, Shigeo Fujita.
G6.33. Rapid Thermal Processing of Implanted GaN Up To 1500°C
X.A. Cao, S.J. Pearton, R.K. Singh, C.R. Abernathy, J. Han, R.J. Shul, D.J. Rieger, J.C. Zolper, R.G. Wilson, M. Fu, J.A. Sekhar, H.J. Guo, S.J. Pennycook.
G6.35. Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
P.P. Ruden, J.D. Albrecht, A. Sutandi, S.C. Binari, K. Ikossi-Anastasiou, M.G. Ancona, R.L. Henry, D.D. Koleske, A.E. Wickenden.
G6.39. Behavior of W and WSix Contact Metallization on n- and p-Type GaN
X.A. Cao, F. Ren, J.R. Lothian, S.J. Pearton, C.R. Abernathy, J.C. Zolper, M.W. Cole, A. Zeitouny, M. Eizenberg, R.J. Shul.
G6.40. Photoelectrochemical Etching of InxGa1-xN
Hyun Cho, S.M. Donovan, C.R. Abernathy, S.J. Pearton, F. Ren, J. Han, R.J. Shul.
G6.41. Simulation of a GaN Based Static Induction Transistor
Gabriela E. Bunea, S.T. Dunham, T.D. Moustakas.
G6.42. Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
R.W. Chuang, A.Q. Zou, H.P. Lee, Z.J. Dong, F.F. Xiong, R. Shih, M. Bremser, H. Juergensen.
G6.43. Crystal Structure and Defects in Nitrogen-Deficient GaN
S. Oktyabrsky, K. Dovidenko, A.K. Sharma, V. Joshkin, J. Narayan.
G6.44. Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
Yong-Hoon Cho, T.J. Schmidt, S. Bidnyk, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars.
G6.45. Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers
A.D. Andreev, E.P. O'Reilly.
G6.46. Study of Thin Films Polarity of Group III Nitrides
K. Dovidenko, S. Oktyabrsky, J. Narayan, M. Razeghi.
G6.47. Temperature Dependence of Bound Exciton Emissions in GaN
D.G. Chtchekine, G.D. Gilliland, Z.C. Feng, S.J. Chua, D.J. Wolford, S.E. Ralph, M.J. Schurman, I. Ferguson.
G6.48. Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
S. Bidnyk, B.D. Little, Y.H. Cho, J. Krasinski, J.J. Song, W. Yang, S.A. McPherson.
G6.49. NiIn As An Ohomic Contact To p-GaN
D.B. Ingerly, Y.A. Chang, Y. Chen.
G6.53. GaN p-n Structures Fabricated by Mg Ion Implantation
E.V. Kalinina, V.A. Solov'ev, A.S. Zubrilov, V.A. Dmitriev, A.P. Kovarsky.
G6.54. Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
T.J. Schmidt, S. Bidnyk, Yong-Hoon Cho, A.J. Fischer, J.J. Song, S. Keller, U.K. Mishra, S.P. DenBaars.
G6.56. Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He
Hyun Cho, Y.B. Hahn, D.C. Hays, K.B. Jung, S.M. Donovan, C.R. Abernathy, S.J. Pearton, R.J. Shul.
G6.57. Focused Ion Beam Etching of GaN
C. Flierl, I.H. White, M. Kuball, P.J. Heard, G.C. Allen, C. Marinelli, J.M. Rorison, R.V. Penty, Y. Chen, S.Y. Wang.
G6.58. Physics-Based Intrinsic Model for AlGaN/GaN HEMTs
Shangli Wu, Richard T. Webster, A.F.M. Anwar.
G6.59. Ensemble Monte Carlo Study of Electron Transport in Bulk InN
E. Bellotti, B. Doshi, K.F. Brennan, P.P. Ruden.
G6.65. Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
Leah Bergman, Dimitri Alexson, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, Cengiz Balkas, Robert F. Davis.
G7.4. Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
T.A. Kennedy, E.R. Glaser, W.E. Carlos, P.P. Ruden, Shuji Nakamura.
G7.5. Fabrication of Smooth GaN-Based Laser Facets
D.A. Stocker, E.F. Schubert, K.S. Boutros, J.M. Redwing.
G7.6. Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
R. Hickman II, J.J. Klaassen, J.M. Van Hove, A.M. Wowchak, C. Polley, M.F. Rosamond, P.P. Chow.
G7.7. Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
Jung Han, M.H. Crawford, R.J. Shul, S.J. Hearne, E. Chason, J.J. Figiel, M. Banas.
G7.8. Generation Recombination Noise in GaN Photoconductors
M. Misra, D. Doppalapudi, A.V. Sampath, T.D. Moustakas, P.H. McDonald.
G8.1. Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
R.J. Shul, L. Zhang, C.G. Willison, J. Han, S.J. Pearton, J. Hong, C.R. Abernathy, L.F. Lester.
G8.2. Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
H.P. Gillis, M.B. Christopher, K.P. Martin, D.A. Choutov.
G8.4. Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
M.J. Murphy, B.E. Foutz, K. Chu, H. Wu, W. Yeo, W.J. Schaff, O. Ambacher, L.F. Eastman, T.J. Eustis, R. Dimitrov, M. Stutzmann, W. Rieger.
G9.2. Piezoelectric Properties of GaN Self-Organized Quantum Dots
B. Daudin, F. Widmann, J. Simon, G. Feuillet, J.L. Fouviere, N.T. Pelekanos, G. Fishman.
G9.4. Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant
H. Hirayama, Y. Aoyagi, S. Tanaka.
G9.5. Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
Huajie Chen, A.R. Smith, R.M. Feenstra, D.W. Greve, J.E. Northrup.
G9.9. Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior
E. Kaminska, A. Piotrowska, J. Jasinski, J. Kozubowski, A. Barcz, K. Golaszewska, D.B. Thomson, R.F. Davis, M.D. Bremser.
G10.1. Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, I. Akasaki.
G10.2. GaN Homoepitaxy for Device Applications
M. Kamp, C. Kirchner, V. Schwegler, A. Pelzmann, E.J. Ebeling, M. Lesczczynski, I. Grzegory, T. Suski, S. Porowski.
G10.4. Doping of AlGaN Alloys
Chris G. Van de Walle, C. Stampfl, J. Neugebauer, M.D. McCluskey, N.M. Johnson.
G10.5. Etch Processing of III-V Nitrides
C.R. Eddy, Jr..
G10.6. Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
J.T. Hsieh, J.M. Hwang, H.L. Hwang, W.H. Hung.
G10.7. Focused Ion Beam Micromachining of GaN Photonic Devices
Irving Chyr, A.J. Steckl.
G11.1. Luminescence From Erbium-Doped Gallium Nitride Thin Films
J.M. Zavada, Myko Thaik, U. Hommerich, J.D. MacKenzie, C.R. Abernathy, F. Ren, H. Shen, J. Pamulapati, H. Jiang, J. Lin, R.G. Wilson.
G11.2. RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
E. Alves, M.F. DaSilva, J.C. Soares, J. Bartels, R. Vianden, C.R. Abernathy, S.J. Pearton.
G11.3. Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium-Doped GaN
M. Garter, R. Birkhahn, A.J. Steckl, J. Scofield.
G11.4. Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
S. Kim, X. Li, J.J. Coleman, R. Zhang, D.M. Hansen, T.F. Kuech, S.G. Bishop.
G11.6. Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
U. Hommerich, J.T. Seo, Myo Thaik, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, R.G. Wilson, J.M. Zavada.
G11.7. Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
Nicolas Grandjean, Jean Massies, Mathieu Leroux, Marguerite Laugt, Pierre Lefebvre, Bernard Gil, Jacques Allegre, Pierre Bigenwald.
G11.8. Defect Luminescence in Heavily Mg-Doped GaN
M.A. Reshchikov, G-C. Yi, B.W. Wessels.
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