Figure 10

Current-voltage characteristics of a discrete GaN/AlGaN p-i-n heterostructure photodiode (left). The dynamic resistance versus voltage is also shown (right). Note that the diode dynamic resistance peaks near zero-bias and is very large. This implies high optical detectivity. R₀A = 1.5 x 10⁹ -cm² and D* = 6.1 x 10¹³ cm Hz^1/2W^-1 were obtained for this device.

(click for full image)

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