Figures

Figure 1

Cross-sectional TEM micrographs of MOCVD grown GaN on Al2O3 substrates.

Figure 2

AFM scans of GaN surface for areas of 1x1µm2 (top) or 10x10µm2 (bottom).

Figure 3

SIMS profiles of O, C, H and Si in upper 1.5µm of the GaN epilayer.

Figure 4

Schematic of GaN planar Schottky diode.

Figure 5

I-V characteristic at 25°C of GaN Schottky diode.

Figure 6

Calculated breakdown voltage as a function of doping and epi thickness in GaN Schottky diodes. Experimental points from Caltech work [26] and this work are also shown.

Figure 7

Measurement temperature dependence of VRB in GaN Schottky diodes.

Figure 8

Measurement temperature dependence of reverse saturation current density measured at -100 V bias.

© 1999 The Materials Research Society