Figures

Figure 1

Cross-sectional TEM micrographs of MOCVD grown GaN on Al₂O₃ substrates.

(click for full image)

Figure 2

AFM scans of GaN surface for areas of 1x1µm² (top) or 10x10µm² (bottom).

Figure 3

SIMS profiles of O, C, H and Si in upper 1.5µm of the GaN epilayer.

Figure 4

Schematic of GaN planar Schottky diode.

Figure 5

I-V characteristic at 25°C of GaN Schottky diode.

Figure 6

Calculated breakdown voltage as a function of doping and epi thickness in GaN Schottky diodes. Experimental points from Caltech work [26] and this work are also shown.

Figure 7

Measurement temperature dependence of V_RB in GaN Schottky diodes.

Figure 8

Measurement temperature dependence of reverse saturation current density measured at -100 V bias.

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© 1999 The Materials Research Society