Growth and Device Performance of GaN Schottky Rectifiers
Jen-Inn Chyi , C. -M. Lee, C.C.Chuo
Department of Electrical Engineering,National Central University,Taiwan
G. C. Chi
Department of Physics, National Central University
G. T. Dang, A. P. Zhang, Fan Ren
Department of Chemical Engineering, University of Florida
X.A. Cao, S.J. Pearton
Department of Materials Science and Engineering, University of Florida
S. N. G. Chu
Bell Laboratories, Lucent Technologies
R. G. Wilson
Consultant,Stevenson Ranch,CA
This article was received on Monday, June 21, 1999 and
accepted on Thursday, August 19, 1999. Abstract
Undoped, 4µm thick GaN layers grown by Metal Organic Chemical Vapor
Deposition were used for fabrication of high stand off voltage (356 V) Schottky
diode rectifiers. The figure of merit
VRB2/RON, where VRB is the reverse
breakdown voltage and RON is the on-resistance, was ~ 4.53
MW-cm-2 at 25°C. The reverse breakdown voltage displayed
a negative temperature coefficient, due to an increase in carrier concentration
with increasing temperature. Secondary Ion Mass Spectrometry measurements
showed that Si and O were the most predominant electrically active impurities
present in the GaN.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4, 8(1999).
last updated Monday, August 23, 1999 4:46:42 PM.© 1999 The Materials Research Society
