Figure 2

Photoluminescence spectra of a modulation doped GaN/AlGaN QW with different excitation photon energies, as indicated by the arrows. The topmost spectrum was excited with 3.72 eV photons. The three middle peaks originate from emissions in the QW. The energetically lowest emission is from the GaN buffer layer, and the highest energy emission originates from the AlGaN barrier.


top        text     Figure 1     Figure 3        endnotes

last updated Monday, August 2, 1999 12:11:47 PM.

© 1999 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research