Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
J. Dalfors, J. P. Bergman, P.O. Holtz, B. Monemar
Department of Physics and Measurement Technology, Linköping University
H. Amano, I. Akasaki
Department of Electrical and Electronic Engineering, Meijo University
This article was received on Friday, May 28, 1999 and
accepted on Friday, July 30, 1999. Abstract
Photoluminescence
spectra were measured for 100 Å wurtzite GaN AlGaN modulation doped
quantum wells. Three well-resolved peaks originate from the quantum well. The
theoretically calculated confinement energies have been compared to the
experimental energy positions and found to be in good agreement with the data,
assuming that the piezoelectric field is largely screened by the electron gas.
The highest energy transition may originate from the Fermi edge, consistent
with the temperature dependence of the photoluminescence. Decay times for the
different transitions indicate that the photoexcited holes are
localized.
