Figures

Figure 1

GaN growth rate versus V/III ratio at substrate temperature 830°C. The different symbols shows data for different samples at similar conditions. I- the Ga-rich / N-rich transition; II- the molecular flow regime limitation

Figure 2

Reflectivity oscillation during GaN growth at different substrate temperatures

Figure 3

GaN growth rate versus substrate temperature. V/III ratio: blue sircles -40; black squares - 95; red triangles - 165

Figure 4

GaAs (001) growth rate versus substrate temperature. V/III ratio: blue circles - 2, red squares - 4.

Figure 5

Reflectivity oscillations during GaN free evaporation in vacuum

Figure 6

GaN free evaporation rate and desorption rate during the MBE growth. Green squares - free evaporation; solid line represents data of Munir and Searcy [14]; desorption rate under V/III ratio: blue sircles -40; black squares - 95; red triangles - 165.

Figure 7

GaN evaporation rate versus ammonia flux at substrate temperature (875±5)°C. Our experimental points are marked by the same symbols as on Figure 6, dotted line is guided for eye. Open circles and solid line represent experimental and calculated data [6], respectively.

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© 1999 The Materials Research Society