Figures

Figure 1

Solid phase composition of InGaN layer grown in AIX-200 horizontal reactor as a function of substrate temperature at low In/(In+Ga) ratio in the gas phase. The reactor pressure is 50 mbar. Solid line represents results of the calculations, circles are the experimental data.

Figure 2

Indium content in InGaN grown in AIX-200 horizontal reactor as a function of TMIn/(TMIn+TEGa) gas phase ratio. The reactor pressure is 50 mbar. Solid line presents modeling results, circles are the experimental data.

Figure 3

Indium content in InGaN grown in AIX-200 horizontal reactor as a function of substrate temperature at high In/(In+Ga) gas phase ratio. The reactor pressure is 50 mbar. Solid line presents the modeling results, circles are the experimental data.

Figure 4

Indium content in InGaN grown in AIX-200 horizontal reactor as a function of reactor pressure. Red line presents the modeling results, circles - experimental data.

Figure 5

Scheme of AIX 2000 HT Planetary Reactor.

Figure 6

Modeling analysis of InGaN growth by MOVPE in AIX 2000 HT Planetary Reactor - flow pattern

Figure 7

Modeling analysis of InGaN growth by MOVPE in AIX 2000 HT Planetary Reactor - temperature contours.

Figure 8

Modeling analysis of InGaN growth by MOVPE in AIX 2000 HT Planetary Reactor - TMIn mass fraction contours.

Figure 9

Modeling analysis of InGaN growth by MOVPE in AIX 2000 HT Planetary Reactor - In mass fraction contours.

Figure 10

Modeling analysis of InGaN growth by MOVPE in AIX 2000 HT Planetary Reactor - indium content in InGaN as the function of radial position at the substrate. Solid line presents the modeling results, dashed line is the average experimental value.

Figure 11

PL mapping of InGaN layer grown in the Planetary Reactor.

© 1999 The Materials Research Society