Discussion of Article 5 in Volume 4

This is a discussion of the MIJ-NSR article entitled Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor by R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, Yu. N. Makarov, O. Schoen, M. Heuken, G. Strauch, Holger Juergensen

Comments on this paper by the reviewer(s):

Reviewer 1: This is a first attempt to model InGaN MOCVD growth using numerical simulations, and as such makes a reasonable contribution to the field. The major weakness is that the mechanism, particularly regarding the chemistry, that is the basis for the simulations is poorly understood. In fact, it is pretty clear that the simple sticking-coefficient model that is used is quite incomplete, and that gas-phase interactions and decomposition must be playing an important role. Even basic trends, such as dependences of In composition on partial and total pressures, are unexplained. The seeming quantitative agreement between models and experiment in the current simulations don't speak to the model's fidelity in capturing the essential physics and chemistry, but speak more to the adjustability of fitting parameters. Still, this paper can make a contribution to the field so long as it doesn't claim as much as it does, and so long as it includes (perhaps in a table or an appendix) all the physical and chemical parameters they used in their model (so that their results can be compared to others' simulations later).

This discussion is moderated by R. A. Talalaev.

Messages

Comments on review report. by R. A. Talalaev, (6/16/99).

Comments on review report. by R. A. Talalaev, (6/21/99).

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