Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
R. A. Talalaev
Ioffe Physical-Technical Institute
E. V. Yakovlev, S. Yu. Karpov
Soft-Impact Ltd (St.Petersburg, Russia)
Yu. N. Makarov
Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg
O. Schoen, M. Heuken, G. Strauch, Holger Juergensen
AIXTRON AG
This article was received on Tuesday, March 9, 1999 and
accepted on Friday, May 28, 1999. Abstract
Multiwafer
Planetary Reactor is a promising system for large-scale production of
heterostructures for LED's based on III-group nitrides. Analysis of chemical
processes occurring in the reactor allows one to get insight into specific
mechanisms governing growth of nitride based heterostructures. In the present
paper results of modeling analysis of MOVPE of InxGa1-xN
layers in AIX-200 Reactor and AIX 2000 HT Planetary Reactor are reported. The
model used for MOVPE process analysis accounts for gas flow, heat transfer,
and multicomponent mass transport along with gas phase and surface chemical
reactions. Results of the modeling analysis of In transport and incorporation
into the solid phase are compared with experimental data. It is shown that the
model predicts reasonably well the In incorporation during MOVPE of InGaN under
In/(In+Ga) ratio in the gas phase less than 20%.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4, 5(1999).
last updated Monday, June 14, 1999 1:16:51 PM.© 1999 The Materials Research Society
