Figures

Figure 1

GaN growth rate as a function of substrate temperature. Solid line - modeling results, circles - experimental data from [19].

Figure 2

Partial pressures of species near the/ growing surface as a function of substrate temperature. Dashed line - thermodynamic pressure of ammonia.

Figure 3

Indium content in InGaN layer as a function of substrate temperature. Violet(dashed) line corresponds to TMIn/(TMIn+TEGa) ratio = 0.3, red line corresponds to TMIn/(TMIn+TEGa) ratio = 0.2, green (dashed-dotted ) line corresponds to TMIn/(TMIn+TEGa) ratio = 0.1. Points are the experimental data from [22] (TMIn/(TMIn+TEGa) ratio = 0.2).

© 1999 The Materials Research Society