Discussion of Article 4 in Volume 4

This is a discussion of the MIJ-NSR article entitled Novel approach to simulation of group-III nitrides growth by MOVPE by S. Yu. Karpov, V. G. Prokofyev, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov

Description of the paper by the reviewer(s):

Reviewer 1: In this paper, a model specific for groth of group-III-nitrides is presented. The authors are taking into account special features as low sticking coefficients and incomplete decomposition. The model is applied to analysis of growth of GaN and GaInN in a horizontal tube reactor.

This discussion is moderated by R. A. Talalaev.

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