Novel approach to simulation of group-III nitrides growth by MOVPE
S. Yu. Karpov, V. G. Prokofyev, E. V. Yakovlev
Soft-Impact Ltd (St.Petersburg, Russia)
R. A. Talalaev
Ioffe Physical-Technical Institute
Yu. N. Makarov
Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg
This article was received on Wednesday, March 24, 1999 and
accepted on Thursday, May 27, 1999. Abstract
Recent
studies revealed specific features of chemical processes occurring on the
surface of growing group-III nitrides - extremely low sticking
probability of molecular nitrogen, low sticking coefficient and incomplete
decomposition of ammonia frequently used as the nitrogen precursor. These
features (kinetic by nature) result in the growth process going on under
conditions remarkably deviated from the gas-solid heterogeneous equilibrium. In
this paper we propose a novel approach to modeling of group-III nitride growth
by MOVPE taking into account these features. In the model the
sticking/evaporation coefficients of N2 and NH3 extracted
from independent experiments are used allowing adequate description of the
kinetic effects. The model is applied to analysis of growth of binary (GaN) and
ternary (InGaN) compounds in a horizontal tube reactor. The growth rate and the
solid phase composition are predicted theoretically and compared with available experimental data. The modeling results reveal lower ammonia decomposition
ratio on the surface of the crystal as compared to thermodynamic expectations.
The developed model can be used for optimization of growth process conditions.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4, 4(1999).
last updated Monday, June 14, 1999 1:40:22 PM.© 1999 The Materials Research Society
