Figures

Figure 1

A cross section of two adjacent GaN/SiC HBTs.

Figure 2

An SEM picture of a GaN emitter finger grown on patterned SiO2/p-SiC/n-SiC using MOCVD.

Figure 3

Pictures of two completed GaN/SiC HBT structures with one GaN emitter finger (left) and four GaN emitter fingers (right). The emitter widths in both devices are 10 µm.

Figure 4

Room temperature common base I-V characteristics for a GaN/4H-SiC HBT. The emitter current is stepped in 1mA increments from 1mA.

Figure 5

Room temperature I-V characteristics for the base-emitter heterojunction (broken line) and the base-collector junction (solid line).

Figure 6

Gummel plot measured at room temperature from an HBT with one GaN emitter finger (A = 10x100µm2).

Figure 7

Gummel plot measured at 300°C.

Figure 8

Arrhenius plot of the dc current gain measured at VBE=5V. The extracted activation energy is 0.07 eV.

© 1999 The Materials Research Society