A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C


John T Torvik , M. Leksono, J. I. Pankove
Astralux Inc.

B. Van Zeghbroeck
University of Colorado

This article was received on Tuesday, February 9, 1999 and accepted on Saturday, April 10, 1999.

Abstract

We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C.

Outline

  • Introduction
  • Device design
  • Device Fabrication
  • Results and Discussion
  • Conclusions
  • Acknowledgments

    • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 4, 3(1999).

    last updated Wednesday, April 21, 1999 4:10:37 PM.

    © 1999 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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